|Academic Profile |
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Assoc Prof Chen Tupei
Associate Professor, School of Electrical & Electronic Engineering
|T. P. Chen received the B.Sc. and M.Sc. degrees in physics (semiconductors and devices) in 1983 and 1987, respectively, both from Zhongshan (Sun Yat-Sen) University, China, and the Ph.D. degree from The University of Hong Kong in 1994. He is currently a tenured Associate Professor in Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore. From Feb. 1990 to Oct.1991, he was a visiting researcher at the Fritz-Haber Institute of Max-Planck Society, Germany. In the years of 1994 to 1997, he was a postdoctoral fellow in The University of Hong Kong and the National University of Singapore, and he also worked in Chartered Semiconductor Manufacturing Ltd for a short period (June – December 1996). He was a senior scientist at PSB Singapore for about two and half years before he joined Nanyang Technological University as an assistant professor in February 2000. |
He is the author or coauthor of more than 300 peer-reviewed journal papers (including close to 100 papers in Applied Physics Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics, and IEEE Electron Device Letters), more than 130 conference presentations, one book and 6 book chapters. He has filed 13 U.S. patents and 12 Technology Disclosures. He has supervised & co-supervised 26 PhD students (including graduated and current students) and supervised 27 research staff. He is a PI & Co-PI of >16 research projects (total grant > S$35M).
He taught the following undergraduate/postgraduate courses (lectures or tutorials) in the past ~ 20 years in NTU:
E446/EE4646 VLSI Technology; EE6601 Advanced Wafer Processing; EE4613 CMOS Process and Device Simulation; EE4694 IC Reliability and Failure Analysis; EE8067 Ceramics in History, Arts, Gemstones, Environment, and Modern Life; E412/E425/EE4612 Wafer Fabrication and Device Measurement; E202 Analogue Electronics; E281/EE2003 Semiconductor Fundamentals; E313 Integrated Circuits & Semiconductor Processing Technology; EE3003 Integrated Electronics; EE1008 Computing.
|Past and current research topics / interests include|
1) Nanoscale CMOS devices and reliability physics; ULSI technology;
2) Semiconductor and metal nanocrystals/nanoparticles and their applications in nanoelectronic and photonic devices;
3) Novel memory devices (nanocrystal Flash memory, oxide-based RRAMs/CBRAMs, analog memory, WORM, 1T-DRAM, etc.);
4) Applications of ReRAM/Memristors in AI chips, in-memory computing, FPGA;
5) Si photonic devices (Si-based light emitters, on-chip optical interconnects);
6) Flexible/wearable/transparent devices and applications (transparent/flexible high mobility thin-film transistors / thin film memory / thin film circuits, high-resolution touch panel, electronic skin, large-area flexible x-ray imaging films);
7) Solar energy-related materials and devices (nanostructured spectrally selective absorbing coating for concentrating solar power, anti-reflection coating with capabilities of down-converting UV light and IR rejection for solar cells).
- Advanced ReRAM Technology for Embedded Systems
- Next generation high performance transparent conductors for flexible interactive touch devices
- Study of Multi-Bit Storage in RRAM Devices
- J. B. Yang, T. P. Chen, S. S. Tan, C. M. Ng and L. Chan. (2008). Influence of hydrogen dispersive diffusion in nitrided gate oxide on negative bias temperature instability of p-MOSFETs. Applied Physics Letters, 93, 013501-3.
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, M. Yang, J. I. Wong, Z. Liu, Y. C. Liu and S. Fung. (2008). Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix. Applied Physics Letters, 93, 023122 -3.
- Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, S. Fung. (2008). Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals. Applied Physics Letters, 92, 013102.
- C. Y. Ng, T. P. Chen, L. Ding, and S. Fung. (2006). Memory characteristics of MOSFETs with densely-stacked silicon-nanocrystal layers in the gate oxide synthesized by low-energy ion beam. IEEE Electron Device Letters, 27(4), 231-233.
- C. Y. Ng, T P Chen, M. Yang, J. B. Yang, L. Ding, C. M. Li, A. Du and A. Trigg. (2006). Impact of programming mechanisms on performance and reliability of non volatile memory devices based on Si nanocrystal. IEEE Transactions on Electron Devices, 53(4), 663-667.