|Academic Profile |
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Assoc Prof Chen Tupei
Associate Professor, School of Electrical & Electronic Engineering
Phone: +65 67904238
Office: S2.2 B2 07
|T. P. Chen received the B.Sc. and M.Sc. degrees in physics (semiconductors and devices) in 1983 and 1987, respectively, both from Zhongshan (Sun Yat-Sen) University, China, and the Ph.D. degree from The University of Hong Kong in 1994. He is currently a tenured Associate Professor in Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore. From Feb. 1990 to Oct.1991, he was a visiting researcher at the Fritz-Haber Institute of Max-Planck Society, Germany. In the years of 1994 to 1997, he was a postdoctoral fellow in The University of Hong Kong and the National University of Singapore, and he also worked in Chartered Semiconductor Manufacturing Ltd for a short period (June – December 1996). He was a senior scientist at PSB Singapore for about two and half years before he joined Nanyang Technological University as an assistant professor in February 2000. |
He is the author or coauthor of more than 290 peer-reviewed SCI journal papers, more than 130 conference presentations, one book and 6 book chapters. He has filed 10 U.S. patents and 12 Technology Disclosures. He has supervised & co-supervised 26 PhD students (including graduated and current students) and surpervised 27 research staff. He is a PI & Co-PI of >16 research projects (total grant > S$35M).
He taught the following undergraduate/postgraduate courses (lectures or tutorials) in the past >19 years:
E446/EE4646 VLSI Technology; EE6601 Advanced Wafer Processing; EE4613 CMOS Process and Device Simulation; EE4694 IC Reliability and Failure Analysis; EE8067 Ceramics in History, Arts, Gemstones, Environment, andModern Life; E412/E425/EE4612 Wafer Fabrication and Device Measurement; E202 Analogue Electronics; E281/EE2003 Semiconductor Fundamentals; E313 Integrated Circuits & Semiconductor Processing Technology; EE3003 Integrated Electronics; EE1008 Computing.
|Past and current research topics / interests include|
1) Nanoscale CMOS devices and reliability physics; ULSI technology
2) Semiconductor and metal nanocrystals/nanoparticles and their applications in nanoelectronic and photonic devices;
3) Novel memory devices (nanocrystal Flash memory, RRAMs/CBRAMs, analog memory, WORM, 1T-DRAM, etc.);
4) Memristors and applications in Si neural devices and networks (electronic neuron & synapse);
5) Si photonic devices (Si-based light emitters, on-chip optical interconnects);
6) Flexible/transparent electronic devices and applications (transparent/flexible high mobility thin-film transistors / thin film memory / thin film circuits, transparent display, high-resolution touch panel, electronic skin, large-area flexible x-ray & ultrasonic imaging films, etc.);
7) Solar energy-related materials and devices (nanostructured spectrally selective absorbing coating for concentrating solar power, smart thermochromic / photochromic / electrochromic materials & devices, etc.).
- Advanced ReRAM Technology for Embedded Systems
- Next generation high performance transparent conductors for flexible interactive touch devices
- Study of Multi-Bit Storage in RRAM Devices
- J. B. Yang, T. P. Chen, S. S. Tan, C. M. Ng and L. Chan. (2008). Influence of hydrogen dispersive diffusion in nitrided gate oxide on negative bias temperature instability of p-MOSFETs. Applied Physics Letters, 93, 013501-3.
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, M. Yang, J. I. Wong, Z. Liu, Y. C. Liu and S. Fung. (2008). Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix. Applied Physics Letters, 93, 023122 -3.
- Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, S. Fung. (2008). Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals. Applied Physics Letters, 92, 013102.
- C. Y. Ng, T. P. Chen, L. Ding, and S. Fung. (2006). Memory characteristics of MOSFETs with densely-stacked silicon-nanocrystal layers in the gate oxide synthesized by low-energy ion beam. IEEE Electron Device Letters, 27(4), 231-233.
- C. Y. Ng, T P Chen, M. Yang, J. B. Yang, L. Ding, C. M. Li, A. Du and A. Trigg. (2006). Impact of programming mechanisms on performance and reliability of non volatile memory devices based on Si nanocrystal. IEEE Transactions on Electron Devices, 53(4), 663-667.