|Assoc Prof Zhou Xing|
Division of Microelectronics
School of Electrical & Electronic Engineering
College of Engineering
Phone: (+65)6790 4532
- PhD University of Rochester 1990
- MS University of Rochester 1987
- BE Tsinghua University 1983
|Prof Zhou Xing is currently in the School of Electrical and Electronic Engineering since he joined NTU in 1992. He obtained his BEng degree in electrical engineering from Tsinghua University in 1983, MS and PhD degrees in electrical engineering from the University of Rochester in 1987 and 1990, respectively. His past research interests include Monte Carlo simulation of photocarrier transport and ultrafast phenomena as well as mixed-mode circuit simulation and CAD. His recent research focuses on nanoscale CMOS compact model development. His research group has been developing a unified core model for nanoscale bulk, SOI, double-gate, nanowire CMOS. His work has been sponsored by Semiconductor Research Corporation (SRC), Atomistix, A*STAR, DSO, and the recent Institute for Sustainable Nanoelectronics (ISNE) at NTU. He is Program Director of the Computational Nano-Electronics Group (CNEG) and Lab Supervisor of the Computational Nano-Electronics Lab (CNEL) in EEE. He was a visiting professor at Stanford University during 1997 and 2001, and at Hiroshima University during 2003, and at Universiti Teknologi Malaysia in May 2007. He is the founding chair of the Workshop on Compact Modeling (WCM) in association with the NSTI Nanotech Conference since 2002. Dr Zhou is a senior member of the IEEE, an editor of the IEEE Electron Device Letters, an elected member of the Electron Devices Society (EDS) Administrative Committee, chair of EDS Asia/Pacific Subcommittee for Regions/Chapters, a member of the EDS Compact Modeling technical committee as well as Publication and Educational Activities committees, and an EDS Distinguished Lecturer.|
|Prof Zhou Xing's areas of expertise are semiconductor device physics, modeling, simulation, technology CAD, mixed-signal CAD, Monte Carlo, ultrafast phenomena. His current research works focus on nanoscale compact model development for bulk/SOI/multigate/nanowire CMOS.|
|Research Grant |
- A*STAR Science and Engineering Research Council (2011-2014) [by A*STAR Science & Engineering Research Council (SERC)]
- A*STAR Science and Engineering Research Council - Public Sector Funding (2011-2014) [by A*STAR Science & Engineering Research Council (SERC)]
- Clean Energy Research Programme (2010-2013) [by Economic Development Board (EDB)]
- Singapore-MIT Alliance for Research and Technology (SMART) Centre (2012-2013) [by Singapore-MIT Alliance (SMA)]
|Current Projects |
- Compact Modeling for Novel III-V Devices
- Device Characterization and Process-Design-Kit (PDK) Establishment
- Optical Model and Simulation Tool for Poly-Si Thin-Film On Textured Glass (CERP grant title: Advanced Poly-Silicon Thin-Film Solar Cells and Modules- Application of Solid Phase Crystallization)
- Optical Modeling and Analysis of Nano-structured Glass Architectures (CERP Title: Advanced Superstrates for Micromorph Silicon Solar Cells)
- SOI Model Validation and Characterization
- C. Q. Wei, Y.-Z. Xiong, X. Zhou. (2009). Investigation of Low-Frequency Noise in N-Channel FinFETs From Weak to Strong Inversion. IEEE Transactions on Electron Devices, 56(11), 2800–2810.
- C. Q. Wei, Y. Jiang, Y.-Z. Xiong, X. Zhou, N. Singh, S. C. Rustagi, G. Q. Lo, and D.-L. Kwong. (2009). Impact of Gate Electrode on 1/f Noise of Gate-All-Around Silicon Nanowire Transistors. IEEE Electron Device Letters, 30(10), 1081-1083.
- G. J. Zhu, X. Zhou, T. S. Lee, L. K. Ang, G. H. See, S. H. Lin, Y. K. Chin, and K. L. Pey. (2009). A Compact Model for Undoped Silicon-Nanowire MOSFETs with Schottky-Barrier Source/Drain. IEEE Transactions on Electron Devices, 56(5), 1100-1109.
- Chengqing Wei, Yong-Zhong Xiong, Xing Zhou, Navab Singh, Subhash C. Rustagi, Guo Qiang Lo, and Dim-Lee Kwong. (2009). Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs in the Subthreshold Region. IEEE Electron Device Letters, 30(6), 668-671.
- G. J. Zhu, G. H. See, S. H. Lin, and X. Zhou. (2008). Ground-Referenced" Model for Three-Terminal Symmetric Double/Gate MOSFETs with Source/Drain Symmetry. IEEE Transactions on Electron Devices, 55(9), 2526-2530.