Academic Profile
Assoc Prof Ng Geok Ing 

Associate Professor 
 
School of Electrical & Electronic Engineering 
College of Engineering 



Email: EGING@ntu.edu.sg
Phone: (+65)6790 5013 
Office: S2-B2b-69 
Education
  • PhD University of Michigan 1990
  • MSE University of Michigan 1986
  • BSE University of Michigan 1984
Biography
Dr. Ng Geok Ing received his Ph.D degree in electrical engineering from the University of Michigan, Ann Arbor in 1990. From 1991 to 1993, he was a Research Fellow at the Centre for Space Terahertz Technology in the University of Michigan, working on microwave/ millimeter-wave semiconductor devices and MMICs. In 1993, he joined TRW Inc. in Space Park, California as a Senior Member of Technical Staff engaging in the R&D work on GaAs and InP-based HEMTs for high frequency low-noise and power MMIC applications. In 1995, he joined Nanyang Technological University as a Lecturer in the School of EEE. In 1996, he became a Senior Lecturer and was seconded to be the Programme Manager for the III-V MMICs Programme at the Microelectronics Centre in NTU.
In May 2000, he co-founded DenseLight Semiconductor Pte. Ltd. which is a NTU spin-off Singapore-based international photonics semiconductor company funded by international Venture Capitalist. While in DenseLight Semiconductors Pte. Ltd., he held the position of Chief Operating Officer in charge of setting up the manufacturing facility and operations. He also held the title of Vice-President of Engineering for technology development particularly in the area of III-V MMIC.
Dr. Ng is currently seconded to the Temasek Laboratories at the Nanyang Technological University as the Programme Manager for the MMIC Design Centre. His current research interests include device physics, fabrication and characterisation of microwave devices with different III-V material systems for low-noise, power and MMIC applications and MEMS. Dr. Ng is a member of IEEE, Tau Beta Pi and Eta Kappa Nu. In 1990, he was awarded the European Microwave Prize for his work on InP-based heterostructure monolithic amplifiers.
Research Interests
Current research interests include device physics, fabrication and characterisation of microwave devices with different III-V material systems for low-noise, power and MMIC applications and MEMS.
Research Grant
  • A*STAR Science and Engineering Research Council (2011-2014) [by A*STAR Science & Engineering Research Council (SERC)]
  • A*STAR Science and Engineering Research Council (2012-2017) [by A*STAR Science & Engineering Research Council (SERC), Nanyang Technological University]
  • A*STAR Science and Engineering Research Council (2012-2017) [by Nanyang Technological University, A*STAR Science & Engineering Research Council (SERC)]
  • Defence Research and Technology Office (DRTech) (2013-)
  • EDB - Joint Industry Postgraduate II Programme (2010-2018) [by GlobalFoundries Singapore Ltd, Economic Development Board (EDB)]
  • EDB - Joint Industry Postgraduate II Programme (2010-2020) [by Economic Development Board (EDB), GlobalFoundries Singapore Ltd]
  • MINDEF-NTU Joint Applied R&D Co-operation Programme (JPP) (2013-2014) [by Nanyang Technological University, Ministry of Defense (MINDEF)]
  • MINDEF-NTU Joint Applied R&D Co-operation Programme (JPP) (2013-2015) [by Nanyang Technological University, Ministry of Defense (MINDEF)]
  • NRF Competitive Research Program (2014-2019) [by National Research Foundation (NRF)]
  • SMA Graduate Fellowship Research Supplement (2014-2018) [by Ministry of Education (MOE)]
  • Singapore-MIT Alliance for Research and Technology (SMART) Centre (2014-2015) [by Singapore-MIT Alliance for Research and Technology (SMART)]
Current Projects
  • A Failure Mode Studies on GaN Transistors
  • Centre for Excellence for Silicon Technologies (COE-Si)
  • Centre for Excellence for Silicon Technologies (COE-Si)
  • Development of GaN MISHEMT
  • Development on Monolith Microwave Integrated Circuits
  • GaN-Based Devices and ICs On Silicon for mm-wave Applications
  • High Linearity Microwave GaN HEMTs
  • III-V and Si-Ge MIR Photonic Integration (Programme Title: A Cutting-edge Silicon Based Mid-IR Photonics Platform for Emerging Communication and Sensing Applications)
  • Joint Industry Postgraduate (JIP) II Programme for MEng students
  • Joint Industry Postgraduate (JIP) II Programme for PhD students
  • MMIC Design Centre
  • Nano-Scale Complementary Metal Oxide Semiconductor Device and Process Technology
  • Next Generation High Performance Uncooled Infrared Image Sensor Technology
  • Novel Processing Approaches for Ultra-High Power Discrete GaN HEMTS on Si Substrate
  • Plasma Assisted Synthesis of Strongly Doped Crystalline Diamond
  • Process Development of Gold Deposition and Via Plating on Ceramic Substrate
  • Project AMBERT
  • Project GaN Growth
  • SMA Graduate Fellowship Research Supplement -Xing Weichuan
Selected Publications
  • S. Arulkumaran,G. I. Ng, S. Vicknesh, W. Hong, K.S. Ang, C. M. Manoj Kumar, K.L. Teo, K. Ranjan. (2013). Demonstration of Submicron-Gate AlGaN/GaN High Electron Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack. Applied Physics Express, .
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