Academic Profile

Academic Profile

Assoc Prof Ng Geok Ing

Director, Silicon Technologies, Centre of Excellence
Associate Professor

School of Electrical & Electronic Engineering
College of Engineering

Phone: (+65)6790 5013
Office: S2-B2b-69

  • PhD University of Michigan 1990
  • MSE University of Michigan 1986
  • BSE University of Michigan 1984
Ng Geok Ing received his Ph.D degree in electrical engineering from the University of Michigan, Ann Arbor in 1990. From 1991 to 1993, he was a Research Fellow at the Centre for Space Terahertz Technology in the University of Michigan, working on microwave/ millimeter-wave semiconductor devices and MMICs. In 1993, he joined TRW Inc. in Space Park, California as a Senior Member of Technical Staff engaging in the R&D work on GaAs and InP-based HEMTs for high frequency low-noise and power MMIC applications.

In 1995, he joined the Nanyang Technological University (NTU) Singapore in the School of EEE. In 1996, he was seconded to be the Programme Manager for the III-V MMICs Programme at the Microelectronics Centre in NTU to spearhead the Monolithic Microwave Integrated Circuit (MMIC) development effort in Singapore. From 2005 to 2009, he was appointed the Programme Manager for the MMIC Design Centre at the Temasek Laboratories@NTU (TL@NTU). Since 2013, he is the Cluster Manager of the Microsystems Group at TL. Concurrently, he is also the Director of the Silicon Technologies Centre of Excellence (Si COE) jointly established by the Science and Engineering Research Council (SERC) and NTU.

He has authored and co-authored more than 200 international journal and conference papers and delivered invited talks at several international conferences. His current research interests include device physics, fabrication and characterisation of microwave devices with different III-V material (GaN, GaAs, InP) systems for low-noise, power and MMIC applications. In 1990, he was awarded the European Microwave Prize for his work on InP-based heterostructure monolithic amplifiers. In 2007, he was awarded the prestigious Singapore’s Defense Technology Prize for his outstanding technological contributions in MMIC R&D.
Research Interests
Current research interests include device physics, fabrication and characterisation of microwave devices with different III-V material systems (GaN, GaAs and InP) for low-noise, power and MMIC applications.
Current Projects
  • A Failure Mode Studies on GaN Transistors
  • Development of GaN MISHEMT
  • Development on Monolith Microwave Integrated Circuits
  • III-N Semiconductor Based HEMT Process for Power Switching Devices
  • III-V and Si-Ge MIR Photonic Integration (Programme Title: A Cutting-edge Silicon Based Mid-IR Photonics Platform for Emerging Communication and Sensing Applications)
  • Joint Industry Postgraduate (JIP) II Programme for MEng students
  • Joint Industry Postgraduate (JIP) II Programme for PhD students
  • MMIC Design Centre
  • Mm-Wave GaN MIS-HEMTs on Si
  • Nano-Scale Complementary Metal Oxide Semiconductor Device and Process Technology
  • Next Generation Mass Manufacturing Thermal-Interface-Materials (TIMs) in 3D-C and 3D-BN
  • Plasma Assisted Synthesis of Strongly Doped Crystalline Diamond
  • Process Development of Gold Deposition and Via Plating on Ceramic Substrate
  • Project AMBERT
  • Project GaN Growth
  • Research Grant For The Development Of Thermal Interface Material
  • SMA Graduate Fellowship Research Supplement -Xing Weichuan
Selected Publications
  • S. Arulkumaran,G. I. Ng, S. Vicknesh, W. Hong, K.S. Ang, C. M. Manoj Kumar, K.L. Teo, K. Ranjan. (2013). Demonstration of Submicron-Gate AlGaN/GaN High Electron Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack. Applied Physics Express, .

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