|Group Website: http://ntuaprl.creatorlink.net|
Dr. Donguk Nam received his Ph.D. (2014) and M.S. (2012) degrees both in Electrical Engineering from Stanford University, and obtained his B.Eng. degree from Korea University (2009). After working as a postdoctoral scholar at Stanford University for one year, he joined Inha University, South Korea, as an Assistant Professor where he led silicon photonics research (SPR) laboratory and advised 11 graduate/undergraduate students from March 2015 to July 2017. In August 2017, he joined the school of EEE at NTU as an Assistant Professor.
In summer of 2016, He was awarded a Tan Chin Tuan Exchange Fellowship to visit Nanyang Technological University as an exchange Professor. His work on highly strained group IV photonic devices has been recognized with several invitations to major conferences/journals including the 2014 & 2016 ECS meetings and Photonics Research journal.
|Current research interests include, but are not limited to:|
- Ultrafast transient absorption spectroscopy - Currently "1" opening
- 2D material-based optoelectronics/nanophotonics
- Silicon/germanium photonics
- Quantum photonics
Advanced Photonics Research (APR) Lab at School of Electrical & Electronic Engineering (EEE) at Nanyang Technological University (NTU) in Singapore is seeking a candidate for a postdoctoral research fellow position in the field of ‘ultrafast transient absorption spectroscopy’. Our lab aims to discover novel electronic and optical properties at NIR and MIR spectral ranges.
Our lab is currently equipped with various ready-to-use state-of-the-art equipment for NIR and MIR ultrafast transient absorption measurements. Those include:
- Helios with microscopic extension (https://ultrafastsystems.com/products/helios-fire/)
- A femtosecond laser with OPA (http://lightcon.com)
- Closed-cycle helium cryostat (https://www.montanainstruments.com/Products/Cryo-Optic/)
- InGaAs 2D NIR CCD with ultra-high sensitivity (https://www.princetoninstruments.com/products/NIRvana-InGaAs-camera)
We are looking for a highly motivated candidate who is eager to investigate ultrafast carrier dynamics of our fundamentally new materials (e.g., highly strained germanium nanowires, band-engineered 2D materials, graphene with pseudo-magnetic fields, etc.).
If you are interested, please send an email to firstname.lastname@example.org.
- S. Gupta, D. Nam, J. Vuckovic and K. Saraswat. (2018). Room Temperature Lasing Unraveled by a Strong Resonance between Gain and Parasitic Absorption in Uniaxially Strained Germanium. Physical Review B (Condensed Matter and Materials Physics), 97, 155127.
- S. Bao, D. Kim, C. Onwukaeme, S. Gupta, K. Saraswat, K. Lee, Y. Kim, D. Min, Y. Jung, H. Qiu, H. Wang, E. A. Fitzgerald, C. Tan and D. Nam. (2017). Low-Threshold Optically Pumped Lasing in Highly Strained Germanium Nanowires. Nature Communications, 8(1)(1), 1845.
- J. Petykiewicz, D. Nam, D. Sukhdeo, S. Gupta, S. Buckley, A. Piggott, J. Vučković and K. Saraswat. (2016). Direct Bandgap Light Emission from Strained Ge Nanowire Coupled with High-Q Optical Cavities. Nano Letters, 16(4), 2168-2173.
- D. Nam, J. Kang, M. Brongersma and K. Saraswat. (2014). Observation of Improved Minority Carrier Lifetimes in High-Quality Ge-on-Insulator Using Time-Resolved Photoluminescence. Optics Letters, 39, 6205-6208.
- D. Nam, D. Sukhdeo, J. Kang, J. Petykiewicz, J. Lee, W. Jung, J. Vučković, M. Brongersma, and K. Saraswat. (2013). Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles. Nano Letters, 13, 3118-3123.