Academic Profile

Academic Profile

Asst Prof Nam Donguk


Assistant Professor

School of Electrical & Electronic Engineering
College of Engineering

Email: DNAM@NTU.EDU.SG
Phone: (+65)6790 5396
Office: S1-B1a-07

Education
  • PhD in Electrical Engineering Stanford University 2014
  • MS in Electrical Engineering Stanford University 2012
  • BS Korea University 2009
Biography
Dr. Donguk Nam received his Ph.D. (2014) and M.S. (2012) degrees both in Electrical Engineering from Stanford University, and obtained his B.Eng. degree from Korea University (2009). After working as a postdoctoral scholar at Stanford University for one year, he joined Inha University, South Korea, as an Assistant Professor where he led silicon photonics research (SPR) laboratory and advised 11 graduate/undergraduate students from March 2015 to July 2017. In August 2017, he joined the school of EEE at NTU as an Assistant Professor.

In summer of 2016, He was awarded a Tan Chin Tuan Exchange Fellowship to visit Nanyang Technological University as an exchange Professor. His work on highly strained group IV photonic devices has been recognized with several invitations to major conferences/journals including the 2014 & 2016 ECS meetings and Photonics Research journal.
Research Interests
Current research interests include, but are not limited to:

- Ultrafast pump-probe spectroscopy - "1 opening for research fellow position"
- NEMS device fabrication - "1 opening for research fellow position"
- Photonic (phononic) crystal cavity design & experiments
- Silicon/germanium photonics
- Optoelectronics
- Quantum photonics
- Cavity optomechanics
- Bandstructure engineering of two dimensional materials
- Strain engineering for discovering novel physics

Advanced Photonics Research (APR) Lab is currently seeking TWO candidates for postdoctoral research fellow positions in the field of ultrafast spectroscopy & NEMS technology. The main theme of our research focuses on developing a new class of semiconductor-based light sources for next-generation optical and quantum computing. Our lab's most recent research on strained germanium nanowire laser is currently in press at Nature Communications and our team is now seeking two candidates who can push the work to the next level (please refer our website: http://ntuaprl.creatorlink.net/RESEARCH).

The successful candidates are expected to perform one or more of the following tasks:
(A) Ultrafast spectroscopy
- Setup of femtosecond pump-probe spectroscopy
- Characterization of transient absorption and gain of various semiconductor materials (e.g. Ge, MoS2)
(B) NEMS technology
- Design, fabrication and characterization of NEMS optomechanical transducer

The successful candidate should possess:
- PhD degree in electrical engineering, mechanical engineering, applied physics or related areas

If you are interested, please send an email to dnam@ntu.edu.sg.
Current Projects
  • Quantitative Understanding of Strained Germanium for Laser Applications via Theoretical and Experimental Approaches
Selected Publications
  • D. Sukhdeo, Y. Kim, S. Gupta, K. Saraswat, B. Dutt, and D. Nam. (2016). Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers. IEEE Electron Device Letters, 37(10), 1307-1310.
  • J. Petykiewicz, D. Nam, D. Sukhdeo, S. Gupta, S. Buckley, A. Piggott, J. Vučković and K. Saraswat. (2016). Direct Bandgap Light Emission from Strained Ge Nanowire Coupled with High-Q Optical Cavities. Nano Letters, 16(4), 2168-2173.
  • D. Sukhdeo, J. Petykiewicz, S. Gupta, Daeik Kim, Sungdae Woo, Youngmin Kim, J. Vučković, K. Saraswat and D. Nam. (2015). Ge Microdisk with Lithographically-Tunable Strain using CMOS-Compatible Process. Optics Express, 23, 33249.
  • D. Nam, J. Kang, M. Brongersma and K. Saraswat. (2014). Observation of Improved Minority Carrier Lifetimes in High-Quality Ge-on-Insulator Using Time-Resolved Photoluminescence. Optics Letters, 39, 6205-6208.
  • D. Nam, D. Sukhdeo, J. Kang, J. Petykiewicz, J. Lee, W. Jung, J. Vučković, M. Brongersma, and K. Saraswat. (2013). Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles. Nano Letters, 13, 3118-3123.

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