|Academic Profile |
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Assoc Prof Chen Tupei
Associate Professor, School of Electrical & Electronic Engineering
Phone: +65 67904238
Office: S2.2 B2 07
|T. P. Chen received the B.Sc. and M.Sc. degrees in physics (semiconductors and devices) in 1983 and 1987, respectively, both from Zhongshan (Sun Yat-Sen) University, China, and the Ph.D. degree from The University of Hong Kong in 1994. He is currently an Associate Professor in Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore. From Feb. 1990 to Oct.1991, he was a visiting researcher at the Fritz-Haber Institute of Max-Planck Society, Germany. In the years of 1994 to 1997, he was a postdoctoral fellow in The University of Hong Kong and the National University of Singapore, and he also worked in Chartered Semiconductor Manufacturing Ltd for a short period (June – December 1996). He was a senior scientist at PSB Singapore for about two and half years before he joined Nanyang Technological University as an assistant professor in February 2000. |
He has > 420 technical publications (including > 290 journal papers and > 130 conference presentations), one book and 6 book chapters. He has filed 9 U.S. patents and 12 Technology Disclosures. He has supervised & co-supervised 26 PhD students (including graduated and current students) and > 20 research staff (including 17 postdoctoral research staff). He is a PI & Co-PI of >15 research projects (total grant > S$19M).
He taught the following undergraduate/postgraduate courses (lectures or tutorials) in the past many years:
E446/EE4646 VLSI Technology; EE6601 Advanced Wafer Processing; EE4613 CMOS Process and Device Simulation; EE8067 Ceramics in History, Arts, Gemstones, Environment, andModern Life; E412/E425/EE4612 Wafer Fabrication and Device Measurement; E202 Analogue Electronics; E281/EE2003 Semiconductor Fundamentals; E313 Integrated Circuits & Semiconductor Processing Technology; EE3003 Integrated Electronics; EE1008 Computing.
|Past and current research topics / interests include|
1) Nanoscale CMOS devices and reliability physics; ULSI technology
2) Semiconductor and metal nanocrystals/nanoparticles and their applications in nanoelectronic and photonic devices;
3) Novel memory devices (nanocrystal Flash memory, RRAMs/CBRAMs, analog memory, WORM, 1T-DRAM, etc.);
4) Memristors and applications in Si neural devices and networks (electronic neuron & synapse);
5) Si photonic devices (Si-based light emitters, on-chip optical interconnects);
6) Flexible/transparent electronic devices and applications (transparent/flexible high mobility thin-film transistors / thin film memory / thin film circuits, transparent display, high-resolution touch panel, electronic skin, large-area flexible x-ray & ultrasonic imaging films, etc.);
7) Solar energy-related materials and devices (nanostructured spectrally selective absorbing coating for concentrating solar power, smart thermochromic / photochromic / electrochromic materials & devices, etc.).
- Advanced ReRAM Technology for Embedded Systems
- Next generation high performance transparent conductors for flexible interactive touch devices
- Study of Multi-Bit Storage in RRAM Devices
- J. B. Yang, T. P. Chen, S. S. Tan, C. M. Ng and L. Chan. (2008). Influence of hydrogen dispersive diffusion in nitrided gate oxide on negative bias temperature instability of p-MOSFETs. Applied Physics Letters, 93, 013501-3.
- Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, M. Yang, J. I. Wong, Z. Liu, Y. C. Liu and S. Fung. (2008). Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix. Applied Physics Letters, 93, 023122 -3.
- Z. Liu, T. P. Chen, Y. Liu, L. Ding, M. Yang, J. I. Wong, Z. H. Cen, Y. B. Li, S. Zhang, S. Fung. (2008). Light-induced instability in current conduction of aluminum nitride thin films embedded with Al nanocrystals. Applied Physics Letters, 92, 013102.
- C. Y. Ng, T. P. Chen, L. Ding, and S. Fung. (2006). Memory characteristics of MOSFETs with densely-stacked silicon-nanocrystal layers in the gate oxide synthesized by low-energy ion beam. IEEE Electron Device Letters, 27(4), 231-233.
- C. Y. Ng, T P Chen, M. Yang, J. B. Yang, L. Ding, C. M. Li, A. Du and A. Trigg. (2006). Impact of programming mechanisms on performance and reliability of non volatile memory devices based on Si nanocrystal. IEEE Transactions on Electron Devices, 53(4), 663-667.